The growth ofchyphen;axis oriented Y1Ba2Cu3Oxthin films on an amorphous buffer layer of Yhyphen;ZrO2, deposited on sapphire substrates, was investigated. Both films were grown by a pulsed laser deposition technique. A strong correlation was observed between the properties of Y1Ba2Cu3Oxand the thickness of the buffer layer. ATcof 89 K was obtained for an optimal buffer layer thickness of 9 nm. A model that adequately describes the film growth process was developed. A multilayer system of Y1Ba2Cu3Oxand amorphous Yhyphen;ZrO2was grown and aTcof 87 K for the upperchyphen;axis oriented layer was measured.
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