Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

Su Jin Kim; Kyeong Heon Kim; Ho Young ChungHee Woong ShinByeong Ryong LeeTak JeongHyung Jo ParkTae Geun Kim

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Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

机译：基于GaN的垂直发光二极管的光输出增强，采用周期和锥形纳米柱结构

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We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272 and 5.1 greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.

机译：我们研究了具有周期和锥形纳米柱阵列（CNA）的GaN基垂直发光二极管（VLEDs），以提高光输出效率。我们发现，470 nm 的直径和 0.8-0.9 μm 的高度增加了光输出，并且器件没有显着的电气性能下降。在350 mA时，光输出功率分别比平面VLED和粗糙表面VLED高272%和5.1%。这些改进的光学性能归因于优化的CNA，它增加了有效的光子逃逸锥并减少了n-GaN-空气界面处的总内反射。我们还通过时域有限差分模拟研究了发射特性和机理。

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来源
《Optics Letters》 |2014年第12期|3464-3467|共4页
作者
Su Jin Kim; Kyeong Heon Kim; Ho Young ChungHee Woong ShinByeong Ryong LeeTak JeongHyung Jo ParkTae Geun Kim;
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作者单位

School of Electrical Engineering, Korea University, Seoul 136-701, South Korea;

LED Device Team, Korea Photonics Technology Institute, 500-779 Gwangju, South Korea;

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正文语种英语
中图分类计量学;
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Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures

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