Measurements of the line shape of the silicon optic mode in boronhyphen;implanted rubyhyphen;laserhyphen;annealed silicon were analyzed assuming a Fanohyphen;type interaction between the discrete optic mode and the continuous valence band states. The results yielded a utilization coefficient of 0.89plusmn;0.09 for the boron impurities. Measurements of the ratio of the intensity of the boron local mode to that of the silicon optic mode as a function of excitation wavelength are consistent with the conclusion of other workers that laser annealing is more effective than thermal annealing in reducing lattice damage.
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