Structural studies on vacuum evaporated ZnSe/p-Si Schottky diodes

S. Venkatachalam; D. Mangalaraj; Sa.K. NarayandassS. VelumaniP. Schabes-RetchkimanJ.A. Ascencio

首页> 外文期刊>Materials Chemistry and Physics >Structural studies on vacuum evaporated ZnSe/p-Si Schottky diodes

【24h】

Structural studies on vacuum evaporated ZnSe/p-Si Schottky diodes

机译：Structural studies on vacuum evaporated ZnSe/p-Si Schottky diodes

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

ZnSe/Si heterostructures, fabricated by vacuum evaporation method, are investigated by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), optical, I–V, C–V analysis, high-resolution electron microscopy (HREM) and ab initio quantum mechanics calculations. From the RBS analysis, the composition of the deposited film is found to be nearly stoichiometric. The structural studies show that the orientation of the crystallites in the deposited film is along (1 1 1) direction. Particle size (D), strain () and dislocation density (δ) values are calculated as 40.71 nm, 0.95 × 10-3 lin-2 m-4 and 6.03 × 1015 lin m-2, respectively, while ZnSe/Si interface was locally studied to establish the high interaction between both crystals and it clears that the Si order produce the gradual array in the ZnSe crystallization. The optical band gap value of the deposited films is calculated as 2.61 eV. The ideality factor is evaluated from the I–V measurement and its value is found to be in the range of 2.8–3.01. From the C–V analysis, the built in potential is found to be 0.61 V. The value of effective carrier concentration (NA) and the barrier height are determined as 3.8 × 1011 cm-3 and 1.457 eV, respectively.

著录项

来源
《Materials Chemistry and Physics》 |2007年第3期|305-311|共7页
作者
S. Venkatachalam; D. Mangalaraj; Sa.K. NarayandassS. VelumaniP. Schabes-RetchkimanJ.A. Ascencio;
展开▼
作者单位

Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore, India;

Departamento de Fisica, ITESM-Campus Monterrey, E.Garza Sada, #2501 Monterrey, Nuevo Leon, C.P. 64849, Mexico;

Instituto de Fisica, University Nal. Autonoma de Mexico, A. P. 20-364, C.P. 01000 Mexico, D.F., MexicoInstituto Mexicano del Petroleo, Eje Central Lazaro Cardenas, 152 Mexico, D.F. 07730, Mexico;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
Thin films; ZnSe/Si Schottky diodes; RBS; XRD; Optical; HREM and ab initio quantum mechanics;

Structural studies on vacuum evaporated ZnSe/p-Si Schottky diodes

摘要

著录项

相关主题

期刊订阅