Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

Marques  LGA; Cavalcante  LS; Simoes  AZPontes  FMSantos-Junior  LSSantos  MRMCRosa  ILVVarela  JALongo  E

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Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

机译：Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

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Ba(Zr0.25Ti0.75)O-3(BZT) thin films prepared by the polymeric precursor method (PPM) were annealed at 500, 600, and 700 degrees C for 4h. All films crystallized in the perovskite structure present a crack-free microstructure. Dielectric properties of the BZT thin films were investigated as a function of frequency and applied voltage. The dielectric constant of the films were 36, 152 and 145 at 1 kHz, while the dielectric loss were 0.08, 0.08, and 0.12 at 1 MHz. (c) 2007 Elsevier B.V. All rights reserved.

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《Materials Chemistry and Physics》 |2007年第3期|293-297|共5页
作者
Marques LGA; Cavalcante LS; Simoes AZPontes FMSantos-Junior LSSantos MRMCRosa ILVVarela JALongo E;
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作者单位

Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP, Brazil;

Univ Fed Piaui, Dept Quim, Ctr Ciencias Nat, BR-64049550 Teresina, PI, Brazil;

Univ Estadual Paulista, Dept Quim, BR-17033360 Bauru, SP, BrazilUniv Estadual Paulista, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram, BR-14801907 Araraquara, SP, Brazil;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
dielectric properties; BZT; thin films; temperature dependence; SOL-GEL PROCESS; ELECTRICAL CHARACTERIZATION; OPTICAL-PROPERTIES; BARIUM-TITANATE; GRAIN-SIZE; CAPACITORS; CERAMICS; DEPOSITION; PRECURSOR; BAZRO3;

Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O-3 thin films obtained from the soft chemical method

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