Defect chemistry of oxides at lower temperatures, e.g. roomtemperamre, especially for electronics applications is analyzed, atwhich the oxygen exchange equilibrium reaction is no longerreversible but the internal ionization equilibrium reactions, inparticular electronic transfer processes, are still reversible.Defect concentrations at such a temperature can be derivednumerically as well as analytically. It is pointed out that the lowtemperature defect chemistry offers a quantitative basis tomanipulate charge carrier and defect concentrations and relatedphysical properties of oxide electroceramics.
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