The temperature dependence of the threshold current has been examined for the doublehyphen;heterojunction lasers (AlGa)As, (InGa) (AsP)/InP, and (InGaAs)/(InGa)P with emission wavelengths between 0.8 and 1.4 mgr;m. For all lasers studied, the threshold current density was found to follow the exponential relationshipJth(T) prop;thinsp;exp(T/T0), where the constantT0was found to be directly related to the energyhyphen;bandhyphen;gap step, Dgr;Eg, between the recombination region and the adjacent confining layers. The value ofT0was found experimentally to obey the relationshipT0=ADgr;Eg, with the constantAhaving values between 200 and 300thinsp;deg;K/eV for the three types of lasers studied.
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