Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells

Haijun Zhang; Yong Xu; Jing WangKai ChangShou-Cheng Zhang

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Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells

机译：Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells

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摘要

Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising Ⅱ-Ⅵ, Ⅲ-Ⅴ, or Ⅳ semiconductors as a large class of new materials realizing the quantum spin Hall state. Especially, we find that the bulk band gap for the quantum spin Hall state can be as large as 0.1 eV. Furthermore, magnetic doping would induce the ferromagnetism in these junction quantum wells due to band edge singularities in the band-inversion regime and to realize the quantum anomalous Hall state.

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来源
《Physical review letters》 |2014年第26期|216803.1-216803.5|共5页
作者
Haijun Zhang; Yong Xu; Jing WangKai ChangShou-Cheng Zhang;
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作者单位

Department of Physics, McCullough Building, Stanford University, Stanford, California 94305-4045, USA;

SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

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正文语种英语
中图分类物理学;
关键词
Ⅲ-Ⅴ semiconductor-to-semiconductor contacts; p-n junctions; and heterojunctions; electron states at surfaces and interfaces; electron states and collective excitations in multilayers; quantum wells; mesoscopic; and nanoscale; quantum wells;

Quantum Spin Hall and Quantum Anomalous Hall States Realized in Junction Quantum Wells

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