Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements

Sercheli MS.; Rettori C.; Zanatta AR.

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Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements

机译：Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements

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Amorphous silicon-nitrogen (a-SiN) thin films doped with rare-earth elements (RE = Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu) were prepared by cosputtering and studied by means of electron spin resonance. It was found that the neutral dangling bond density, D-0, of the a-SiN films decreases with the presence of magnetic REs and the drop in D-0 approximately scales with the de Gennes and/or the spin factor of each RE element. Similar to the decrease in T-c in RE-doped superconductors, our experimental results strongly suggest that an exchange-like interaction, H similar to J(RE.D0)S(RE).S-D0, between the spin of the magnetic REs and that of the D-0 is taking place. (C) 2003 Published by Elsevier Ltd. References: 20

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《Solid State Communications》 |2003年第3期|47-50|共4页
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Sercheli MS.; Rettori C.; Zanatta AR.;
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正文语种英语
中图分类固体物理学;
关键词
Thin films; Impurities in semiconductors; Order-disorder effects; Spin-orbit effects; Electron paramagnetic resonance; Metal-insulator-transition; Silicon nitride films; Alloys; Luminescence;

Neutral dangling bond depletion in amorphous SiN films induced by magnetic rare-earth elements

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