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>Real time technique to measure the electrical resistivity of ultrathin films during growth in plasma environments
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Real time technique to measure the electrical resistivity of ultrathin films during growth in plasma environments
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机译：Real time technique to measure the electrical resistivity of ultrathin films during growth in plasma environments
A technique used to obtain the evolution of the electrical resistivity of ultrathin films during growth in a plasma environment is described. Details are given on the physical construction of the substrate assembly that house specially prepared substrates used for film growth. Discussion on the considerations that were needed for proper design of the circuitry to minimize or eliminate the effects of the plasma and any electrode bias on the measurement of the resistivity is given. Operation of the final design is demonstrated through measurements of the current and induced voltages obtained in real time for ultrathin copper sputter deposited onto silicon dioxide. The measured signals are then used to calculate the resistivity as a function of the thickness of the film. (C) 2003 American Institute of Physics. References: 3
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