We investigate the electrical properties of polycrystalline silicon films implanted with boron or arsenic at doses 4times;1014, 8times;1014, and 5times;1015cmminus;2, respectively. Two posthyphen;implantation rapid thermal annealings (RTAs) have been performed: a standard onehyphen;step RTA (1150thinsp;deg;C, 20 s) and a twohyphen;step RTA (1150thinsp;deg;C, 4 s+680thinsp;deg;C, 4 min). We find that the electrical behavior depends on the implanted species. Boronhyphen;implanted films exhibit the highest electrical properties (high dopant activation and mobility). The trap densityNtat grain boundaries is found to be independent of the heat treatment.
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