A combined molecularhyphen;beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized for the study of IIIhyphen;V semiconductors with the goal of examining the surface with bothinsituscanning tunneling microscopy (STM) and reflection highhyphen;energy electron diffraction (RHEED). Using this system, it is possible to quench the growth and produce realhyphen;space images of the surface as it appeared during deposition. Measurements obtained with both RHEED and STM are presented.
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