Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

Liu BX.; Bai XD.; Lan AD.

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Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

机译：Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

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摘要

The SiO2 layer thermally grown on Si was implanted by 130 and 160 keV Si ions at liquid nitrogen temperature or room temperature to a dose of 1 x 10(17) ions cm(-2). From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After post annealing at 1100 degrees C, another visible band in the range of 1.7 eV was detected. Interestingly, with increasing the annealing time, a blue shift of the peak energy and intensity variation of the 1.7 eV band were observed. A possible interpretation for the observations is also discussed. (C) 1998 Elsevier Science S.A. All rights reserved. References: 15

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来源
《Materials Chemistry and Physics》 |1998年第3期|356-359|共4页
作者
Liu BX.; Bai XD.; Lan AD.;
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作者单位

Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China, .;

bh.med.kyoto-u.ac.jp;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
关键词
Photoluminescence; Ion implantation; Silicon; Annealing; Visible photoluminescence; Porous silicon; Nanocrystals; Fabrication; Confinement;

Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

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