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首页> 外文期刊>Journal of Applied Physics >Effect of (10(1)over-bar0) crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well
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Effect of (10(1)over-bar0) crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well

机译:Effect of (10(1)over-bar0) crystal orientation on many-body optical gain of wurtzite InGaN/GaN quantum well

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摘要

The optical properties of (10 (1) over bar0)-oriented wurtzite (WZ) InGaN/GaN quantum well (QW) lasers are investigated using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. These results are also compared with those of (0001)-oriented WZ InGaN/GaN QW with piezoelectric and spontaneous polarizations taken into account. The optical gain of the (10 (1) over bar0)-oriented QW is largely enhanced over that of the (0001)-oriented QW. This can be explained by the fact that the optical matrix elements near the band edge (k=0) of the (10 (1) over bar0)-oriented InGaN/GaN QW significantly increase compared to that of the (0001)-oriented structure, in addition to the reduction of the effective mass. The threshold current density J(th) of the (10 (1) over bar0)-oriented QW is expected to be about half that of the (0001)-oriented QW structure. (C) 2003 American Institute of Physics. References: 24

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