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首页> 外文期刊>Materials Chemistry and Physics >Characterization of ultra-shallow p(+)-n junctions formed by plasma doping with BF3 and N-2 plasmas
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Characterization of ultra-shallow p(+)-n junctions formed by plasma doping with BF3 and N-2 plasmas

机译：Characterization of ultra-shallow p(+)-n junctions formed by plasma doping with BF3 and N-2 plasmas

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Plasma doping (PLAD) is a promising alternative to conventional ion implantation for the formation of ultra-shallow p(+)-n junctions. In the PLAD process, a silicon wafer is placed directly in a plasma containing the desired dopant ions and then pulse-biased to a negative potential to accelerate positive dopant ions into the silicon surface. Most of Varian's work to date has used BF, source gas and wafer biases of -0.5 to -5 kV to implant boron into 150 and 200 mm wafers. Data will be presented showing successful formation of ultra-shallow junctions, good sheet resistance uniformity and repeatability, and excellent structural quality of the silicon after rapid annealing. Very good device characteristics obtained from deep sub-half micron MOSFETs fabricated using PLAD will also be shown. Finally, the combination of PLAD with an N-2 plasma followed by ultra-low energy B+ implantation to produce ultra-shallow junctions with low sheet resistances will be discussed. (C) 1998 Elsevier Science S.A. All rights reserved. References: 7

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