The electron barrier transmission probability,T, is calculated for planarhyphen;doped potential barrier devices. The calculations are based on the analytic expression derived by Christodoulidesetal. obtained from the exact solution to the Schrouml;dinger timehyphen;independent equation. The original Airy function solution was recast in Bessel function form for ease of computer evaluations. The barrier is assumed to be triangular with the forward slopeS1, much larger than the reverse slopeS2. The quantityTis calculated for values of electron energy,E, above and below the barrier peak,Um. It is found thatTis a sensitive function ofS1for all values ofE. The reverse slope,S2, is observed to have very little effect onTfor values of (Eminus;Um)ge;10 meV, but have a large effect onTfor values of (Eminus;Um)le;0. The quantityTis observed to increase monotonically with increasingE, for practical values of device parameters. These results are in qualitative agreement with those found from the numerical solution of Chandra and Eastman. However, their results give values ofTthat deviate significantly from those obtained in the present work.
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