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XRT mapping of strain induced by 200 MeV Ag14+ ions in Si(001)

机译:XRT mapping of strain induced by 200 MeV Ag14+ ions in Si(001)

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摘要

The strain field generated by 200 MeV Ag14+ ions in Si (001) crystals has been investigated using X-ray topography. By choosing suitable diffraction vectors it has been possible to explore the lattice distortion in the inelastic and elastic loss regions separately. Stationary reflection topographs gave two spatially separated images-one originating from the surface and the other from the region affected by elastic nuclear collisions close to the end of the ion range. The spatial separation of these two images is geometrically related to the depth of this elastic loss region. These topographic findings are compared with TRIM calculations. (C) 1998 Elsevier Science S.A. All rights reserved. References: 4

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