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首页> 外文期刊>Proceedings of the National Academy of Sciences of the United States of America >Electric double-layer transistor using layered iron selenide Mott insulator TlFe_(1.6)Se_2
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Electric double-layer transistor using layered iron selenide Mott insulator TlFe_(1.6)Se_2

机译：Electric double-layer transistor using layered iron selenide Mott insulator TlFe_(1.6)Se_2

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A_(1–x)Fe_(2–y)Se_2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (T_c) ranging up to 32 K. Their parent phases have unique properties compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe_(1.6)Se_2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier doping using an electric doublelayer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave a conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic doping is the origin of the phase transition. This is the first demonstration, to the authors’ knowledge, of an EDLT using a Mott insulator iron selenide channel and opens a way to explore high Tc superconductivity in iron-based layered materials, where carrier doping by conventional chemical means is difficult.

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