We have elaborated a new Monte Carlo program to simulate ionhyphen;channeling spectra from partially damaged crystals. This program provides the transversehyphen;flux distribution together with the fractions of channeled and dechanneled ions, their average energies, and energy fluctuations at any depth by calculating channeledhyphen;ion trajectories under a multistring potential. Thus we can determine the depth profiles of defects and dopant atoms, including preferential lattice positions as well as atomic configurations at interfaces. The present program is applied to deriving the depth profiles of defects induced by 100hyphen;, 150hyphen;, and 200hyphen;keV Ar+irradiation upon GaP(111) crystals. Overall agreement is obtained between the present results and those determined from an analytic manner and calculated from a modifiedtrimprogram, which simulates collision cascades in solids.
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