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机译:Dopant profile and defect control in ion implantation by RTA with high ramp-up rate
NEC 1120, ULSI Device Dev Labs, Sagamihara, Kanagawa 2291198, Japan.;
bh.med.kyoto-u.ac.jp;
Ion implantation; Low energy; High energy; Rta; Enhanced diffusion; Dislocation; Diffusion; Silicon;