We discuss the characteristics of impurity band conduction detectors prepared from epitaxial Si:Sb. These detectors are sensitive to infrared light at wavelengths between 2.5 and 40 mgr;m and outperform the current statehyphen;ofhyphen;thehyphen;art Ge:Be photoconductors for this wavelength range by a combination of a peak responsivityR=32 A/W, low noise equivalent power (NEP) =1.1times;10minus;15W/Hz1/2(at a flux of 1012ph/cm2thinsp;s), inherently low sensitivity to cosmic ray particles, and freedom from the anomalous behavior observed in photoconductors.
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