首页>
外文期刊>Journal of Applied Physics
>Generation-recombination noise in doped-channel Al_(0.3)Ga_(0.7)As/GaAs/In_(0.2)Ga_(0.8)As quantum well micro-Hall devices
【24h】
Generation-recombination noise in doped-channel Al_(0.3)Ga_(0.7)As/GaAs/In_(0.2)Ga_(0.8)As quantum well micro-Hall devices
展开▼
机译：Generation-recombination noise in doped-channel Al_(0.3)Ga_(0.7)As/GaAs/In_(0.2)Ga_(0.8)As quantum well micro-Hall devices
The generation-recombination noise in doped-channel quantum-well AlGaAs/GaAs/InGaAs micro-Hall devices is characterized using deep level noise spectroscopy. The source of this low-frequency noise contribution is identified as a single deep level with activation energy of 476 meV. This level is associated with DX centers located in the Al_(0.30)Ga_(0.70)As near the heterointerfaces. A detailed analysis of the experimental data further indicates a trap ionization energy of about 250 meV, an electron capture cross section of about σ_(0)approx-1×10~(-11) cm~(2), and a total integrated defect concentration of about N_(ts)approx-1.4×10~(10) cm~(-2).
展开▼
