Effect of low-temperature annealing on the luminescent lifetime and negative differential resistance of silicon-implanted borosilicate glass

Gong-Ru Lin

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Effect of low-temperature annealing on the luminescent lifetime and negative differential resistance of silicon-implanted borosilicate glass

机译：Effect of low-temperature annealing on the luminescent lifetime and negative differential resistance of silicon-implanted borosilicate glass

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The silicon-implanted borosilicate glass (BSO:Si~(+)) low-temperature (500℃) annealed at a different time are structurally, electrically, and optically characterized. The weak and broadened x-ray diffraction reveal insignificant Si nano-crystallization even after long-term annealing, whereas the redshifted photoluminescence (PL) interprets the change in category and the decrease in density of irradiative defects in BSO:Si~(+). Time-resolved PL analysis reveals a lengthening luminescent lifetime of BSO:Si~(+) from 1.7 to 2.8 ns, which indicates that the density ratio of nonradiative defects in as-implanted BSO:Si~(+) are reduced by one-tenth after annealing for 60 min. Transmission line mode analysis shows that both the leakage current and the contact resistance of a metal-BSO:Si~(+)-metal diode has dramatically changed by three orders of magnitude. A strong negative differential resistance (NDR) and associated double-barrier electron tunneling phenomenon are observed with a threshold electric field of 290-350 kV/cm. The decreasing barrier height of the metal-BSO:Si~(+) junction from 3.0 to 1.9 eV is mainly contributed by deep-level defects with activation energy of ～1 eV. After annealing, the NDR effect significantly diminishes, the barrier height raises to >2.4 eV, and most electrical characteristics of the metal-BSO:Si~(+) junction have recovered back to be comparable with those of the metal-BSO junction due to the elimination of these defects.

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来源
《Journal of Applied Physics》 |2003年第12期|7542-7546|共5页
作者
Gong-Ru Lin;
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作者单位

Institute of Electro-Optical Engineering, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu, Taiwan 300, Republic of China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
中图分类应用物理学;
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Effect of low-temperature annealing on the luminescent lifetime and negative differential resistance of silicon-implanted borosilicate glass

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