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Infrared Sensor Using Thin Film Ceramic Semiconductor

机译:Infrared Sensor Using Thin Film Ceramic Semiconductor

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摘要

Mn-Co oxide thin films with a mole ratio of 35/65 were prepared ona Si substrate by spin coating a solution of metal 2-ethylhexanatesdissolved in acetic ester. After annealing at 800 deg. C for 1 hour,the crystalline phase of the films was the single cubic spinel phaseand the surface of the films was smooth, without cracks or abnormalparticle growth, and dense, with particles of about 0. l mu m indiameter. Furthermore, the B constant (B25-50=4098K) of the films wasnearly equal to that (B25- 50=4100K) of the bulk of the samecomposition. From these structural and electrical properties, it wasfound that this film process enables us to make the Mn-Co oxide thinfilm thermistors with simplicity and lower cost. We have developed aninfrared sensor using this thin film thermistor by making use of itsfeatures, Such as high thermal sensitivity and high thermal response.

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