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Properties of WC films synthesized by pulsed YAG laser deposition

机译:Properties of WC films synthesized by pulsed YAG laser deposition

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摘要

Tungsten carbide (WC) films are synthesized by a pulsed YAG laser deposition. WC films are deposited on heated Si(100) substrates using WC and WC-5 Co alloy targets. The films are grown using a laser repetition rate of 10 Hz at energy density 3.8 J cm(-2). Auger electron spectroscopy shows that the almost stoichiometric WC films are deposited at the methane gas pressure of 10.0 Pa. Morphology features of the films have been obtained by employing the technique of scanning electron microscopy. Glancing angle X-ray diffraction shows that the peak signal of W2C appears for the film deposited at a substrate temperature of 650 degrees C and the peak signal of WC is observed for the sample prepared at a substrate temperature of 710 degrees C. Measurements of the optical emission spectrum are performed to estimate the processing plasma state. (C) 1998 Elsevier Science S.A. All rights reserved. References: 10

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