Raman scattering measurements have been made to determine losses inphyphen;type GaAs slab waveguides cladded by Al0.3Ga0.7As epitaxial layers. For these measurements, 1.064hyphen;mgr;m laser light is focused onto a cleaved edge of the waveguide layer and the Ramanhyphen;scattered photons are detected at 90deg;. The attenuation of the resulting signal is measured as a function of the propagation distance along the waveguide. Five Gehyphen;doped waveguide layer samples, ranging in concentration from 3times;1016to 3times;1018cmminus;3, were measured. Results are reported for samples 3ndash;5 mm long having layer thicknesses of sim;5ndash;6 mgr;m. Losses from 0.8 to 12.2 cmminus;1have been measured. Comparison is made with earlier results innhyphen;type GaAs.
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