Nitride layers formed by nitrogen implantation with an energy scanning mode

Miyagawa Y.; Ikeyama M.; Saitoh K.Miyagawa S.Nakao S.

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Nitride layers formed by nitrogen implantation with an energy scanning mode

机译：Nitride layers formed by nitrogen implantation with an energy scanning mode

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We reported that a very smooth surface was obtained by room temperature nitrogen implantation into Zr with the energy increasing mode from 35 to 65 keV even with a high dose of 7 x 10(17) ions cm(-2) in contrast to the implantation with the energy decreasing mode and 50 keV mono-energy implantation by which many blisters were observed on the surface. In order to understand the mechanism that causes radiation damage, a dynamic Monte Carlo simulation with the dynamic-SASAMAL code was performed for such an energy scanning mode. The movement of the nitrogen at the stage where the excess nitrogen over stoichiometric concentration just starts to migrate towards the surface was carefully analyzed and the results for the energy increasing mode from 15 to 85 keV with a uniform distribution were compared with that of the energy decreasing mode and 50 keV mono-energy implantation. It was found that, when nitrogen concentration exceeds the stoichiometry, the nitrogen that is enforced to migrate towards the surface is not the newly implanted nitrogen but is the previously implanted one which is moved by the newly implanted nitrogen through binary collisions. The moment given through the collision is towards the surface in the energy increasing mode and it will enhance the migration. In contrast to this, the moment is towards the deeper side in the energy decreasing mode and the mono-energetic implantation, so it will disturb the migration and cause nitrogen gas bubble formation which induces the surface radiation damage with many blisters. Finally, it is proposed that a thick nitride layer without surface damage can be obtained by the energy increasing mode implantation with an adequate energy distribution. (C) 1998 Elsevier Science S.A. All rights reserved. References: 17

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《Materials Chemistry and Physics》 |1998年第3期|296-300|共5页
作者
Miyagawa Y.; Ikeyama M.; Saitoh K.Miyagawa S.Nakao S.;
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作者单位

Natl Ind Res Inst Nagoya, Kita Ku, Hirate Cho 1-1, Nagoya, Aichi 462.;

bh.med.kyoto-u.ac.jp;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
关键词
Nitrogen implantation; High dose implantation; Radiation damage; Energy scanning implantation; Surface modification; Ion-implantation; Composition profiles; Zirconium; Behavior; Silicon;

Nitride layers formed by nitrogen implantation with an energy scanning mode

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