A consideration for electrical activation of carbon implanted into gallium arsenide

Yokota K.; Sakaguchi M.; Sunairi S.Watanabe M.Takagi T.Hirai K.Takano H.Kumagai M.Emi N.

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A consideration for electrical activation of carbon implanted into gallium arsenide

机译：A consideration for electrical activation of carbon implanted into gallium arsenide

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C+-implanted GaAs that the surfaces were encapsulated with 2 x 10(20) cm(-3) As-doped a-Si:H films were annealed at temperatures of 850-1000 degrees C. Carriers were generated only in a shallower region than the projected range of the C+ ions, The sheet carrier concentrations increased slightly with the implanted dose. The activation of implanted C atoms in GaAs encapsulated with As-doped a-Si:H films was improved in comparison with Si or GaAs wafer proximity annealed GaAs and SiO2 encapsulation-annealed GaAs. (C) 1998 Elsevier Science S.A. All rights reserved. References: 12

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来源
《Materials Chemistry and Physics》 |1998年第3期|84-87|共4页
作者
Yokota K.; Sakaguchi M.; Sunairi S.Watanabe M.Takagi T.Hirai K.Takano H.Kumagai M.Emi N.;
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作者单位

Kansai Univ, High Technol Res Ctr, Suita, Osaka 564, Japan.;

bh.med.kyoto-u.ac.jp;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
关键词
Implantation; Compound semiconductors; Defects; Encapsulation; Gaas; Diffusion; Layers;

A consideration for electrical activation of carbon implanted into gallium arsenide

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