Growth of pseudomorphic Si1-yCy and Si1-x-yGexCy alloy layers on  100  Si by ion implantation and pulsed excimer laser induced epitaxy

Fogarassy E.; Grob JJ.; Muller D.Prevot B.de Unamuno S. Boher P.Stehle M.Grob A.

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Growth of pseudomorphic Si1-yCy and Si1-x-yGexCy alloy layers on 100 Si by ion implantation and pulsed excimer laser induced epitaxy

机译：Growth of pseudomorphic Si1-yCy and Si1-x-yGexCy alloy layers on 100 Si by ion implantation and pulsed excimer laser induced epitaxy

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In this work, Si1-yCy and Si1-x-yGexCy alloy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution and substitutional incorporation, strain formation or relaxation and C-induced band-gap modification, were demonstrated to depend strongly on both ion implantation and laser processing conditions. The growing of pseudomorphic epitaxial layers from group IV semiconductor alloys was successfully achieved by using the high energy and large area beam (up to 1 J cm(-2) per pulse over 40 cm(2)) excimer laser developed by SOPRA for industrial applications. (C) 1998 Elsevier Science S.A. All rights reserved. References: 30

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《Materials Chemistry and Physics》 |1998年第3期|153-159|共7页
作者
Fogarassy E.; Grob JJ.; Muller D.Prevot B.de Unamuno S. Boher P.Stehle M.Grob A.;
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作者单位

Lab PHASE, UPR292 CNRS, BP 20, F-67037 Strasbourg 02, France.;

bh.med.kyoto-u.ac.jp;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
关键词
Lasers; Implantation; Silicon; Germanium; Carbon; Epitaxy; Photoluminescence; Heterostructures; Films;

Growth of pseudomorphic Si1-yCy and Si1-x-yGexCy alloy layers on 100 Si by ion implantation and pulsed excimer laser induced epitaxy

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