Modelling of GaAs-MMIC microstrip line up to 40 GHz

J. P. Thakur; A. K. Pandey; A. KedarK. K. GuptaH. P. Vyas

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Modelling of GaAs-MMIC microstrip line up to 40 GHz

机译：Modelling of GaAs-MMIC microstrip line up to 40 GHz

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Modelling of MMIC multidielectric microstrip line on GaAs substrate for its precise characterization has been presented in this article. An accurate design database for the characteristic parameters of the microstrip line, namely, effective dielectric constant, characteristic impedance, and attenuation coefficient, has been generated using the spectral-domain method (SDM). The accuracy of the developed database for the frequency range 1 to 40 GHz has been verified with the experimental results. On-wafer measurements have been carried out to minimize the parasitic losses at the high frequencies and the effect of CPW-pads has been de-embedded from the measured S-parameters to obtained accurate characteristic parameters of the microstrip line. The theoretical and the measured values of the characteristic parameters of microstrip lines show good agreement within 1 to 2. This work is expected to be useful in GaAs foundries for accurate MMIC-CAD modelling of microstrip lines up to 40 GHz.

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来源
《International journal of RF and microwave computer-aided engineering》 |2004年第5期|475-482|共8页
作者
J. P. Thakur; A. K. Pandey; A. KedarK. K. GuptaH. P. Vyas;
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作者单位

Dept. of Electronic Science, University of Delhi South Campus, New Delhi 110021, India;

Solid-State Physics Laboratory, Lucknow Road, Delhi 110054, India;

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原文格式 PDF
正文语种英语
中图分类计算技术、计算机技术;
关键词
MMIC; microstrip line; on-wafer measurement; spectral-domain method; de-embedding;

Modelling of GaAs-MMIC microstrip line up to 40 GHz

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