Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

Qin XR.; Lagally MG.; Swartzentruber BS.

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Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

机译：Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

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摘要

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions. References: 28

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来源
《Physical review letters》 |2000年第20期|4645-4648|共4页
作者
Qin XR.; Lagally MG.; Swartzentruber BS.;
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作者单位

Univ Wisconsin, Madison, WI 53706, USA, .;

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原文格式 PDF
正文语种英语
中图分类物理学;
关键词
Electronic-structures; Surface; Si(001); Growth; Dimer; Si; Morphology; Photoemission; Interface; Diffusion;

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Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages

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