Electrical and Optical Characterization of Energy States in Self-assembled InAs/GaAs Quantum Dots with Size Distribution

Sung Ho Hwang; Jung II Lee; Jin Dong SongWon Jun ChoiII Ki HanSoo Kyung Chang

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Electrical and Optical Characterization of Energy States in Self-assembled InAs/GaAs Quantum Dots with Size Distribution

机译：Electrical and Optical Characterization of Energy States in Self-assembled InAs/GaAs Quantum Dots with Size Distribution

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We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

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来源
《Key engineering materials》 |2005年第2期|1023-1028|共6页
作者
Sung Ho Hwang; Jung II Lee; Jin Dong SongWon Jun ChoiII Ki HanSoo Kyung Chang;
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作者单位

Nano Device Research Center, KIST, Seoul, 136-791, Korea;

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原文格式 PDF
正文语种英语
中图分类工程基础科学;
关键词
InAs; quantum dot; size distribution; thermal activation energy;

Electrical and Optical Characterization of Energy States in Self-assembled InAs/GaAs Quantum Dots with Size Distribution

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