The formation of titanium silicides on Si implanted with different BF2+dosages has been studied by secondary ion mass spectrometry and transmission electron microscopy measurements. The thickness of the silicide layer formed in the temperature ranging from 600 to 800thinsp;deg;C has been investigated as a function of the implanted BF2+dosage up to 1times;1016cmminus;2. Annealing at 700thinsp;deg;C results in conversion of the titanium film into predominantly C49 TiSi2, and most of it is transformed into the C54 phase at 800thinsp;deg;C or higher, resulting in a lower sheet resistance (16 mgr;OHgr;thinsp;cm). The titanium silicide thickness formed after the rapid thermal annealing (RTA) treatment depends on the implanted BF2+dosage, caused by the native oxide enhanced by increased damage. Boron is redistributed into the silicide layer up to the solid solubility limit during annealing, leading to an accumulation at the silicide/silicon interface. The lowest contact resistance (with a size of 0.7 mgr;mtimes;0.7 mgr;m) of 35 OHgr; is obtained at the annealing temperature of 700thinsp;deg;C.
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