首页>
外文期刊>Journal of Applied Physics
>Bonding configuration and density of defects of SiO_(x)H_(y) thin films deposited by the electron cyclotron resonance plasma method
【24h】
Bonding configuration and density of defects of SiO_(x)H_(y) thin films deposited by the electron cyclotron resonance plasma method
展开▼
机译：Bonding configuration and density of defects of SiO_(x)H_(y) thin films deposited by the electron cyclotron resonance plasma method
The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiO_(x)H_(y) thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH_(4) and O_(2) as precursor gases. The film composition was measured by heavy ion elastic recoil detection analysis and energy dispersive x-ray spectroscopy. Suboxide films with compositions ranging from SiO_(2) to SiH_(0.38) were obtained. Infrared spectroscopy showed the presence of different Si-O and Si-H vibration modes. The usual estimation of the oxygen to silicon ratio by the wave number of the Si-O-Si stretching band was not accurate for films far from stoichiometry. These off-stoichiometric films also showed a broader Si-O-Si stretching peak than the stoichiometric ones, indicating a higher bonding disorder. The position of the Si-O-Si bending and rocking modes did not depend on the film composition. On the other hand, the peak position of the Si-H modes were found strongly dependent on the Si environment. By single-wavelength ellipsometry at λ=632.8 nm the refractive index n was found to range between 1.45 (SiO_(2)) and 2.04 (SiO_(0.06)H_(0.36)). Electron spin resonance measurements showed that stoichiometric films presented the well known E′ center (·Si≡O_(3)) with concentrations in the 10~(16)-10~(17) cm~(-3) range, while for Si-rich films (x<<1) the Si dangling bond center (Si_(DB), ·Si≡Si_(3)) was the only detectable defect, with concentrations in the 10~(18)-10~(19) cm~(-3) range. In near-stoichiometric films both E′ and Si_(DB) centers were found.
展开▼
