首页> 外文期刊>Key engineering materials >Antimony Doped Bi_2O_3 Thin Films
【24h】

Antimony Doped Bi_2O_3 Thin Films

机译:Antimony Doped Bi_2O_3 Thin Films

获取原文
获取原文并翻译 | 示例
           

摘要

Bismuth oxide system exhibit high oxide ionic conductivity and have been proposed as good electrolyte materials for application such as solid oxide fuel cell (SOFC) and oxygen sensor. A preliminary investigation for depositing thin and dense antimony doped Bi_2O_3 films based on wet chemical routes was realized. Antimony doped Bi_2O_3 films were deposited onto glass substrate from bismuth nitrate and antimony precursor solutions. As chelating agent polyethyleneglycol (PEG) was used and the above-mentioned precursor solutions were sufficiently viscous. Crystallization behavior and micro structure evolutions of the obtained films were investigated using spectroscopic ellipsometry (SE), polarized microscope observation, X-ray diffractometry (XRD), and infrared spectrometry (IR). The thickness and the porosity of the films were evaluated. The preparation techniques differ mainly in precursor materials and method of deposition, leading to different quality of the resulting films.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号