Determination of lattice mismatch in Ga1minus;xAlxAs LPE layer on GaAs substrate by using a divergent xhyphen;ray source

Shihhyphen; Lin Chang; Navin B. Patel; Y. NannichiF. C. de Prince

首页> 外文期刊>journal of applied physics >Determination of lattice mismatch in Ga1minus;xAlxAs LPE layer on GaAs substrate by using a divergent xhyphen;ray source

【24h】

Determination of lattice mismatch in Ga1minus;xAlxAs LPE layer on GaAs substrate by using a divergent xhyphen;ray source

机译：Determination of lattice mismatch in Ga1minus;xAlxAs LPE layer on GaAs substrate by using a divergent xhyphen;ray source

获取原文

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

A new method of determining lattice mismatch in LPE heterojunction systems has been developed by utilizing a divergent xhyphen;ray source. The experimental arrangements and operation procedures are much simpler than those of the usual xhyphen;ray methods.

著录项

来源
《journal of applied physics》 |1979年第4期|2975-2976|共页
作者
Shihhyphen; Lin Chang; Navin B. Patel; Y. NannichiF. C. de Prince;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类
关键词

客服邮箱：kefu@zhangqiaokeyan.com

客服微信
服务号

Determination of lattice mismatch in Ga1minus;xAlxAs LPE layer on GaAs substrate by using a divergent xhyphen;ray source

摘要

著录项

相关主题

期刊订阅