A broadhyphen;beam ion source has been developed for thinhyphen;film technology and ion implantation. A broad ion beam of 20ndash;3000 eV and 100 mA can be extracted from the source. Three shapes of beam can be produced that are suitable for appropriate thinhyphen;film processes, uniform, convergent, and spherically divergent beams. The ion optics for forming these multishaped beams is discussed. According to the various beamhyphen;extraction energy, triple, double, and single grids are employed. A singlehyphen;grid system is used for an ion energy less than 200 eV. It can operate with a variety of gases, such as N2, O2, Ar, CH4, etc. The source has been applied to ionhyphen;beam sputtering deposition, ionhyphen;beam direct deposition, ionhyphen;beamhyphen;assisted deposition, and ion implanter without mass analyzer.
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