GERMANIUM ON SAPPHIRE

H. S. GAMBLE; P. T. BAINE; H. WADSWORTH; Y. H. LOW; P. V. RAINEY; F. H. RUDDELL; B. M. ARMSTRONG; D. W. McNEILL; S. J. N. MITCHELL

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GERMANIUM ON SAPPHIRE

机译：蓝宝石锗

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This paper explores the potential of germanium on sapphire (GeOS) wafers as a universal substrate for System on a Chip (SOC), mm wave integrated circuits (MMICs) and optical imagers. Ge has a lattice constant close to that of GaAs enabling epitaxial growth. Ge, GaAs and sapphire have relatively close temperature coefficients of expansion (TCE), enabling them to be combined without stress problems. Sapphire is transparent over the range 0.17 to 5.5 μm and has a very low loss tangent (α) for frequencies up to 72 GHz. Ge bonding to sapphire substrates has been investigated with regard to micro-voids and electrical quality of the Ge back interface. The advantages of a sapphire substrate for integrated inductors, coplanar waveguides and crosstalk suppression are also highlighted. MOS transistors have been fabricated on GeOS substrates, produced by the Smart-cut process, to illustrate the compatibility of the substrate with device processing.

机译：本文探讨了蓝宝石上的锗（GeOS）晶片作为片上系统（SOC），毫米波集成电路（MMIC）和光学成像仪的通用基板的潜力。 Ge具有接近于GaAs的晶格常数，能够进行外延生长。 Ge，GaAs和蓝宝石具有相对较近的膨胀温度系数（TCE），使它们能够组合在一起而不会出现应力问题。蓝宝石在0.17至5.5μm的范围内是透明的，并且在高达72 GHz的频率下具有非常低的损耗角正切（α）。已经研究了锗与蓝宝石衬底的键合以及锗背面界面的微孔和电气质量。还强调了用于集成电感器，共面波导和串扰抑制的蓝宝石衬底的优点。 MOS晶体管已经在通过Smart-cut工艺生产的GeOS基板上制造，以说明基板与器件处理的兼容性。

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《International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics》 |2008年第4期|共10页
作者
H. S. GAMBLE; P. T. BAINE; H. WADSWORTH; Y. H. LOW; P. V. RAINEY; F. H. RUDDELL; B. M. ARMSTRONG; D. W. McNEILL; S. J. N. MITCHELL;
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2. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties [J] . Novikov H. A., Batalov R. I., Bayazitov R. M., Semiconductors . 2015,第6期

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3. Structure and Surface Morphology of Si_(1-x)Ge_(x) Layers Grown on Si/Sapphire by Molecular Beam Epitaxy Using a Sublimation Silicon Source and Gaseous Germanium Source [J] . S. A. Matveev, S. A. Denisov, V. Yu. Chalkov, Inorganic materials . 2013,第8期

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4. Germanium on Sapphire Technology [C] . H.S. Gamble, P.T. Baine, Y.H. Low, High purity silicon 11 . 2010

机译：蓝宝石技术锗
5. Design, characterization, and profile optimization of silicon-germanium complementary metal-oxide-semiconductor field effect transistors on silicon-on-sapphire (SOS). [D] . Mathew, Suraj Joseph. 1999

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6. Joining Alumina and Sapphire by Growing Aluminium Borate Whiskers In-Situ and the Whiskers’ Orientation Relationship with the Sapphire Substrate [O] . Chun Li, Xiaoqing Si, Shuang Wu, 2020

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7. Germanium on sapphire substrates for system-on-a-chip [O] . Gamble, Harold, Armstrong, Mervyn, Baine, Paul, 2008

机译：用于片上系统的蓝宝石衬底上的锗
8. Germanium Nanocrystals Embedded in Sapphire [R] . Xu, Q., Sharp, I. D., Liao, C. Y., 2005

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GERMANIUM ON SAPPHIRE

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