Defect Assisted Carrier Multiplication in Amorphous Silicon

Miah Mohammad Abu Raihan; Niaz Iftikhar Ahmad; Lo Yu-Hwa

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Defect Assisted Carrier Multiplication in Amorphous Silicon

机译：非晶硅中的缺陷辅助载流子倍增

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Recent studies show disordered materials such as amorphous silicon (a-Si), in spite of their low mobility, can efficiently amplify photocurrent via carrier multiplication process. Detectors with a thin ( x007E;40nm) a-Si multiplication layer has demonstrated single photon sensitivity at high speed under room temperature. It is believed that the abundance of bandtail states that cause low mobility of the amorphous materials actually contribute to the detector x2019;s superior performance because carrier impact ionization involving these states, which can be modeled by donor-acceptor pairs (DAPs), relax the k-selection rule of the many-body carrier multiplication process. Our paper presents a theoretical framework to calculate the carrier multiplication process in a-Si or other disordered materials involving DAPs. Our analysis also establishes the relations between detector characteristics and key parameters such as the density of band tail states, layer thickness, and applied electric field. DAP assisted carrier multiplication rate is computed first. Carrier multiplication coefficients for electrons and holes under given applied field are then calculated using a trial distribution function that satisfies both the continuity equation and the energy balance equation. Our analysis shows that thinner a-Si gives rise to higher multiplication efficiency than thicker a-Si because of its higher carrier kinetic energy when the layer thickness is shorter than the length of energy relaxation by phonon scattering. Using the calculated carrier multiplication coefficients, voltage dependent gain of the device is computed and the results agree well with the measured results of a-Si cycling excitation process (CEP) detectors.

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《IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society》 |2020年第3期|4000711-1-4000711-11|共11页
作者
Miah Mohammad Abu Raihan; Niaz Iftikhar Ahmad; Lo Yu-Hwa;
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作者单位

Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类基础理论;
关键词
Mathematical model; Excitons; Amorphous silicon; Distribution functions; Phonons; Amorphous materials; carrier multiplication rate; energy balance equation; localized states;

机译：数学模型;激子;非晶硅;分配函数;声子;非晶材料;载波倍增率;能量平衡方程;本地化状态;

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2. Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current-voltage characteristics on p-i-n and n-i-p solar cells [J] . Applied physics letters . 2003,第18期

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3. Dependence of steadyhyphen;state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide range [J] . Nobuhiro Hata, Gautam Ganguly, Akihisa Matsuda applied physics letters . 1993,第15期

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4. Lighthyphen;induced defect creation in amorphous silicon: Single carrier versus excitonic mechanisms [J] . Martin Stutzmann applied physics letters . 1990,第23期

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5. STATUS OF AMORPHOUS SILICON AT EPV SOLAR: MODULE MANUFACTURING, DEVICE PERFORMANCE, AND RD [C] . A. E. Delahoy, S. Guo, A. Stavrides, European Photovoltaic Solar Energy Conference . 2008

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Defect Assisted Carrier Multiplication in Amorphous Silicon

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