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MMIC active filter with tuned transversal element

机译:MMIC有源滤波器,带调谐横向元件

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摘要

A novel GaAs monolithic microwave integrated circuit (MMIC) active filter structure based on the lumped and transversal technique is proposed for operation in the X-band. This new structure includes a tuned amplifier as transversal element of thefilter in order to improve the band-edge rejection. A design example of a bandpass filter centered @7.5 GHz with 2-dB passband ripple and 30-dB rejection @ 1 GHz apart from passband edges is presented in terms of computer simulations and layout. Thesimulated results demonstrate its superior performance when compared with the traditional lumped and transversal technique.
机译:该文提出一种基于集总横向技术的新型GaAs单片微波集成电路(MMIC)有源滤波器结构,用于X波段工作。这种新结构包括一个调谐放大器作为滤波器的横向元件,以改善带沿抑制。从计算机仿真和布局的角度给出了一个以 @7.5 GHz 为中心的带通滤波器的设计示例,该滤波器具有 2 dB 通带纹波和 30 dB 抑制 @ 1 GHz,除了通带边缘。仿真结果表明,与传统的集总和横向技术相比,其性能优于传统集总和横向技术。

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