The impact of induced gate noise when simultaneously power and conjugate noise-matching MOS transistors

Tajinder Manku

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The impact of induced gate noise when simultaneously power and conjugate noise-matching MOS transistors

机译：同时为噪声匹配的MOS晶体管供电和共轭噪声时感应栅极噪声的影响

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A method for simultaneously power matching and conjugate noise matching a MOS transistor for radio frequency applications is presented in this paper. Experimental results from a 0.6μm nMOS transistor show that the magnitude of input reactanceequals the optimum noise reactance (i.e., X{sub}in = X{sub}out). Using this result, we provide a method that can be used to match the optimum noise resistance to the source resistance. The described method uses the number of gate fingers as a parameter to conjugately match for noise.

机译：该文提出了一种在射频应用中同时对MOS晶体管进行功率匹配和共轭噪声匹配的方法。0.6μm nMOS晶体管的实验结果表明，输入电抗的大小等于最佳噪声电抗（即X{sub}in = X{sub}out）。利用这一结果，我们提供了一种方法，可用于将最佳噪声电阻与源电阻相匹配。所描述的方法使用栅极指的数量作为参数来共轭匹配噪声。

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《IEEE Transactions on Automatic Control》 |1999年第6期|842-844|共3页
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Tajinder Manku;
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1. Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors [J] . Paulius Sakalas, Herbert G. Zirath, Andrej LitwinMichael SchroterArvydas Matulionis IEEE Transactions on Electron Devices . 2002,第5期

机译：Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors
2. The Impact of Polysilicon Gate Doping on the Low Frequency Noise of MOS Transistors [J] . Ioannidis Eleftherios G., Leisenberger Friedrich P., Rohracher KarlMinixhofer Rainer Fluctuation and Noise Letters: FNL: An Interdisciplinary Scientific Journal on Random Processes in Physical, Biological and Technological Systems . 2022,第3期

机译：The Impact of Polysilicon Gate Doping on the Low Frequency Noise of MOS Transistors
3. Impact of Gate Electrodes on $hbox{1}/f$ Noise of Gate-All-Around Silicon Nanowire Transistors [J] . Wei C., Jiang Y., Xiong Y.-Z.Zhou X.Singh N.Rustagi S. C.Lo G. Q.Kwong D.-L. IEEE Electron Device Letters . 2009,第10期

机译：Impact of Gate Electrodes on $hbox{1}/f$ Noise of Gate-All-Around Silicon Nanowire Transistors

The impact of induced gate noise when simultaneously power and conjugate noise-matching MOS transistors

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