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首页> 外文期刊>new journal of physics >Bias-modulated switching in Chern insulator
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Bias-modulated switching in Chern insulator

机译：陈省身绝缘子中的偏置调制开关

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摘要

The Chern insulator manifests itself via the surface quantized Hall current and magnetoelectric effect. The manipulation of surface magnetizations enables a control of the dissipationless chiral transport and thus allows for potential applications of topological magnetoelectric devices with low-energy consumption. Here, we present experimental studies of bias-modulated switching the magnetic states utilizing the magnetoelectric coupling in a Chern insulator. This is achieved via applying a d.c. bias across the source and drain at various magnetic states, during which an effective magnetic field is developed to switch the quantum anomalous Hall state towards its opposite. Comprehensive transport studies show that the switch efficiency is proportional to the amplitude and applying time of the bias, depends on the initial magnetic state, but is insensitive to the electric polarity. Our results provide an efficient scheme to manipulate the Chern insulator and understanding on the electric breakdown of chiral edge states.

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