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首页> 外文期刊>journal of low power electronics and applications >A sub-50 µm2, voltage-scalable, digital-standard-cell-compatible thermal sensor frontend for on-chip thermal monitoring
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A sub-50 µm2, voltage-scalable, digital-standard-cell-compatible thermal sensor frontend for on-chip thermal monitoring

机译:低于 50 μm2、电压可扩展、数字标准单元兼容的热传感器前端,用于片上热监控

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© 2018 by the authors. Licensee MDPI, Basel, Switzerland.This paper presents an on-chip temperature sensor circuit for dynamic thermal management in VLSI systems. The sensor directly senses the threshold voltage that contains temperature information using a single PMOS device. This simple structure enables the sensor to achieve an ultra-compact footprint. The sensor also exhibits high accuracy and voltage-scalability down to 0.4 V, allowing the sensor to be used in dynamic voltage frequency scaling systems without requiring extra power distribution or regulation. The compact footprint and voltage scalability enables our proposed sensor to be implemented in a digital standard-cell format, allowing aggressive sensor placement very close to target hotspots in digital blocks. The proposed sensor frontend prototyped in a 65 nm CMOS technology has a footprint of 30.1 µm2, 3σ-error of ±1.1◦ C across 0 to 100◦ C after one temperature point calibration, marking a significant improvement over existing sensors designed for dynamic thermal management in VLSI systems.
机译:© 作者 2018 年。本文介绍了一种用于VLSI系统中动态热管理的片上温度传感器电路。该传感器使用单个PMOS器件直接检测包含温度信息的阈值电压。这种简单的结构使传感器能够实现超紧凑的占地面积。该传感器还具有高精度和低至 0.4 V 的电压可扩展性,允许该传感器用于动态电压频率缩放系统,而无需额外的配电或调节。紧凑的尺寸和电压可扩展性使我们提出的传感器能够以数字标准单元格式实现,从而允许将传感器放置在非常靠近数字块中的目标热点的位置。所提出的传感器前端采用65 nm CMOS技术原型设计,在一次温度点校准后,在0至100°C范围内的尺寸为30.1 μm2,3σ误差为±1.1◦C,标志着对现有传感器的重大改进,这些传感器设计用于VLSI系统中的动态热管理。

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