Development of p-type silicon surface barrier detectors

R Saha; R P Sharma

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Development of p-type silicon surface barrier detectors

机译：p型硅表面势垒探测器的开发

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Fabrication techniques for p-type silicon surface barrier detectors have been described. Application of evaporated germanium as a rectifying contact in place of aluminium is studied which resulted in the improvement of shelf life of p-type detectors.

机译：本文介绍了p型硅表面势垒探测器的制备技术。研究了蒸发锗代替铝作为整流接触的应用，从而提高了p型探测器的保质期。

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来源
《The Indian journal of physics.Part A》 |1995年第4期|433-439|共7页
作者
R Saha; R P Sharma;
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作者单位

Variable Energy Cyclotron Centre, DAE, 1/AF Bidhan Nagar, Calcutta-700 064, India;

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原文格式 PDF
正文语种英语
中图分类物理学;
关键词
silicon surface barrier; germanium contact; shelf lite;

机译：硅表面阻隔;锗触点;货架精简版;

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Development of p-type silicon surface barrier detectors

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