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>Processing and characterisation of sol-gel deposited Ta{sub}2O{sub}5 and TiO{sub}2-Ta{sub}2O{sub}5 dielectric thin films
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Processing and characterisation of sol-gel deposited Ta{sub}2O{sub}5 and TiO{sub}2-Ta{sub}2O{sub}5 dielectric thin films
High-dielectric thin films of Ti-doped Ta{sub}2O{sub}5 were deposited on n{sup}+ -type silicon substrate using the spin-on sol-gel process. Doping levels of 8 and 46 TiO{sub}2 mol were used. Following deposition, films were processed attemperatures between 600 and 900℃ using rapid thermal annealing in N{sub}2O. Spectroscopic ellipsometry (SE) and Rutherford backscattering spectrometry (RBS) were used to determine the thickness and the composition of the thin films and the interfacialreaction layers. Metal-insulator-semiconductor capacitor structures were fabricated and impedance-frequency measurements were carried out to measure the dielectric constant of the deposited films. results from both RBS and SE showed that a SiO{sub}2 layer is formed at the Ta{sub}2O{sub}5/Si interface during processing, but the titanium doping inhibits the kinetics of its formation. We found that the dielectric constant of the highly Ti-doped Ta{sub}2O{sub}5 film was 78 greater than. that ofTa{sub}2O{sub}5 sol-gel film processed under similar conditions.
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