Determination of the spectral behaviour of porous silicon based photodiodes

R. J. Martin-Palma; R. Guerrero-Lemus; J. D. MorenoJ. M. Martinez-Duart

首页> 外文期刊>Solid-State Electronics >Determination of the spectral behaviour of porous silicon based photodiodes

【24h】

Determination of the spectral behaviour of porous silicon based photodiodes

机译：

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Porous silicon (PS) based photodiodes were formed by depositing gold (Au) contacts onto the PS surface. PS was formed from p-silicon substrates under different formation parameters (current density and time of anodization), so PS layers withdifferent porosities and thicknesses were obtained. It was determined the responsivity and the quantum efficiency of these structures in the 200-2500 nm wavelength range, from which it has been observed a different behavior of those diodes depending onthe porosity and thickness of the PS layer. It has also been studied the spectral response from different diodes in which semitransparent conducting films (gold and indium tin oxide) have been deposited onto the PS layer, obtaining a significantimprovement in the photoelectronic properties in the visible and near infrared parts of the spectrum.

著录项

来源
《Solid-State Electronics》 |1999年第6期|1153-1157|共5页
作者
R. J. Martin-Palma; R. Guerrero-Lemus; J. D. MorenoJ. M. Martinez-Duart;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类一般性问题;
关键词

相似文献

外文文献
中文文献
专利

1. A new photometric detector in the visible spectral range based on a silicon photodiode [J] . R. Bergbauer, C. Bremer, E. Grell review of scientific instruments . 1993,第11期

机译：A new photometric detector in the visible spectral range based on a silicon photodiode
2. Spectral response of porous silicon based photovoltaic devices [J] . Bayram Unal, Sue C. Bayliss, David T. Clarke Journal of Applied Physics . 2000,第7期

机译：Spectral response of porous silicon based photovoltaic devices
3. Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon [J] . L. A. Balagurov, S. C. Bayliss, V. S. KasatochkinE. A. PetrovaB. UnalD. G. Yarkin Journal of Applied Physics . 2001,第9期

机译：Transport of carriers in metal/porous silicon/c-Si device structures based on oxidized porous silicon
4. 驴-Porous Silicon (驴PS) gas sensor based on interdigitated 驴-electrodes (ID驴E''s) [C] . Valera, Enrique, Casals, . 2007

机译：驴-Porous Silicon (驴PS) gas sensor based on interdigitated 驴-electrodes (ID驴E''s)
5. Investigation on the Electrochemical Performance of the Silicon and Germanium Based Lithium-Ion Batteries =硅基与锗基锂离子电池的电化学性能研究 [D] . Liu, Chenguang. 2020

机译：Investigation on the Electrochemical Performance of the Silicon and Germanium Based Lithium-Ion Batteries =硅基与锗基锂离子电池的电化学性能研究
6. Enzymatic reaction of the immobilized enzyme on porous silicon studied by matrix-assisted laser desorption/ionization-time of flight-mass spectrometry [O] . Xu SY, Pan CS, Hu LG, 2004

机译：Enzymatic reaction of the immobilized enzyme on porous silicon studied by matrix-assisted laser desorption/ionization-time of flight-mass spectrometry
7. Base Formulae for the Determination of the Altitude of Artificial Clouds . Formules de Base pour la Determination de Laltitude des Nuages Artificiels [R] . Debehogne, H., Vanhemelrijck, E. 1972

机译：确定人工云海拔高度的基本公式。 Formules de Base pour la Determination de Laltitude des Nuages artificiels

Determination of the spectral behaviour of porous silicon based photodiodes

摘要

著录项

相似文献

相关主题

期刊订阅