Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

S. Shingubara; O. Okino; Y. SayamaH. SakaueT. Takahagi

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Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

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A highly ordered two-dimensional array of 48 nm Cu wires was successfully fabricated on Si substrate by the usage of anodic oxidation of aluminum (Al) for the first time. Anodic oxidation was carried out for Al sputtered film on Si substratecovered by a thin thermally oxidized SiO{sub}2 film, which was very effective to protect Si substrate from anodic oxidation. A highly ordered array of nanoholes was formed by the two steps Al anodic oxidation, and finally Cu was deposited by electrolessplating in nanoholes which aspect ratio was 2.5. The present method suggests possibility of a large area two-dimensional array of quantum dots or wires on semiconductor substrate, which are considered to be a key technology for future ULSIs operated bysingle electron tunneling phenomena.

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《Solid-State Electronics》 |1999年第6期|1143-1146|共4页
作者
S. Shingubara; O. Okino; Y. SayamaH. SakaueT. Takahagi;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类一般性问题;
关键词
Al anodic oxidation; Silicon; Nanowires; Nanoholes; Self-organization;

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Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

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