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外文期刊>The Indian journal of physics.Part A
>Ion channeling studies for the determination of orientation of the epilayers in an ion-beam-synthesized Si/CoSi_2/Si(111) system
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Ion channeling studies for the determination of orientation of the epilayers in an ion-beam-synthesized Si/CoSi_2/Si(111) system
The orientation of the top Si and the buried CoSi_2 epitaxial layers in an ion-beam-synthesized epitaxial Si/CoSi_2/Si(111) system has been determined with Rutherford backscattering spectrometry and channeling techniques using 1.0 MeV He~+ ions. The off-normal axial channeling studies at and around the 110 and the 114 crystallographic directions of the bulk Si have been performed. The results show that both the top Si layer (88 nm) and the buried CoSi_2 layer (68 nm) have the same orientation (type-A) as the bulk Si underneath.
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