Spin-dependent photocurrent induced by Rashba-type spin splitting in Al_(0.25)Ga_(0.75)N/GaN heterostructures

K. S. Cho; C.-T. Liang; Y. F. ChenY. Q. TangB. Shen

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Spin-dependent photocurrent induced by Rashba-type spin splitting in Al_(0.25)Ga_(0.75)N/GaN heterostructures

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Circular and linear photogalvanic effects are experimentally demonstrated in (0001)-oriented Al_(0.25)Ga_(0.75)N/GaN heterostructures. By changing the incident angle of the pumping light beam, it is possible to manipulate the relative strength between the circular and linear photogalvanic effects. The spin-dependent signal is evidenced by the sign change upon reversing the radiation helicity. Its consistency with the strength of the Rashba-type spin splitting as determined from the beating of Shubnikov-de Haas oscillations reveals the underlying mechanism responsible for the observed effect. The measured spin-dependent photocurrent is larger than that of the intersubband transition by two orders of magnitude at room temperature. AlGaN/GaN heterostructures therefore provide an excellent opportunity for the generation of spin polarized current to be used in spintronics.

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《Physical review, B. Condensed matter and materials physics》 |2007年第8期|085327.1-085327.5|共9页
作者
K. S. Cho; C.-T. Liang; Y. F. ChenY. Q. TangB. Shen;
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Department of Physics, National Taiwan University, Taipei 106, Taiwan;

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正文语种英语
中图分类固体物理学;
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Ⅲ-Ⅴ semiconductor-to-semiconductor contacts; p-n junctions; and heterojunctions; electron density of states and band structure of crystalline solids; spin polarized transport in semiconductors;

Spin-dependent photocurrent induced by Rashba-type spin splitting in Al_(0.25)Ga_(0.75)N/GaN heterostructures

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