Atomic and electronic structure of the nonpolar GaN(11ˉ00) surface

M. Bertelli; P. Loptien; M. WenderothA. RizziR. G. UlbrichM. C. RighiA. FerrettiL. Martin-SamosC. M. BertoniA. Catellani

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Atomic and electronic structure of the nonpolar GaN(11ˉ00) surface

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We present a cross-section scanning tunneling microscopy (STM), scanning tunneling spectroscopy STSand ab initio density-functional theory simulations study of the cleaved nonpolar 11ˉ00 surface m-plane of n-type HVPE GaN free-standing quasisubstrates. Atomically resolved empty and filled states STM topographies show that no reconstruction occurs upon cleavage, as predicted by theory. STS measurements on clean and atomically flat cleaved surfaces defect concentration d21012 cm-2 show that the Fermi energy is not pinned and the tunneling current flows through Ga-like electronic states lying outside the fundamental band gap. On surface areas with defect concentration d31013 cm-2, the Fermi energy is pinned inside the band gap in defect-derived surface states and tunneling through filled (empty) N-like (Ga-like) states takes place.

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《Physical review, B. Condensed matter and materials physics》 |2009年第11期|115324:1-115324:7|共7页
作者
M. Bertelli; P. Loptien; M. WenderothA. RizziR. G. UlbrichM. C. RighiA. FerrettiL. Martin-SamosC. M. BertoniA. Catellani;
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作者单位

IV. Physikalisches Institut, Georg-August-Universitat Gottingen, D-37077 Gottingen, Germany;

CNR-INFM National Center on NanoStructures and BioSystems at Surfaces (S3) and Dipartimento di Fisica,Universita di Modena e Reggio Emilia, I-41100 Modena, Italy;

CNR-IMEM, Parco Area Delle Scienze 37a, I-43100 Parma, Italy;

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正文语种英语
中图分类物理学;
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cross section; defect concentration; current flows;

Atomic and electronic structure of the nonpolar GaN(11ˉ00) surface

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